Cadmium zinc telluride detects gamma raysSUDHARSANAN, R; PARNHAM, K. B; KARAM, N. H et al.Laser focus world. 1996, Vol 32, Num 6, pp 199-204, issn 1043-8092, 5 p.Article

Monolithic multi-cell GaAs laser power converter with very high current densityKRUT, D; SUDHARSANAN, R; NISHIKAWA, W et al.sans titre. 2002, pp 908-911, isbn 0-7803-7471-1, 4 p.Conference Paper

Te-rich liquid phase epitaxial growth of HgCdTe on Si-based substratesSMITH, F. T; NORTON, P. W; LO VECCHIO, P et al.Journal of electronic materials. 1995, Vol 24, Num 9, pp 1287-1292, issn 0361-5235Conference Paper

Patterning and overgrowthy of nanostructure quantum well wire arrays by LP-MOVPEKARAM, N. H; MASTROVITO, A; HAVEN, V et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 591-597, issn 0022-0248Conference Paper

Effectiveness of strained-layer superlattices in reducing defects in GaAs epilayers grown on silicon substratesEL-MASRY, N; TARN, J. C. L; HUMPHREYS, T. P et al.Applied physics letters. 1987, Vol 51, Num 20, pp 1608-1610, issn 0003-6951Article

Laser selective deposition of GaAs on SiBEDAIR, S. M; WHISNANT, J. K; KARAM, N. H et al.Applied physics letters. 1986, Vol 48, Num 2, pp 174-176, issn 0003-6951Article

Laser direct writing of single-crystal III-V compounds on GaAsKARAM, N. H; EL-MASRY, N. A; BEDAIR, S. M et al.Applied physics letters. 1986, Vol 49, Num 14, pp 880-882, issn 0003-6951Article

Solar cell generations over 40% efficiencyKING, R. R; BHUSARI, D; LAW, D. C et al.Progress in photovoltaics (Print). 2012, Vol 20, Num 6, pp 801-815, issn 1062-7995, 15 p.Conference Paper

High-efficiency space and terrestrial multijunction solar cells through bandgap control in cell structuresKING, Richard R; FETZER, Chris M; KARAM, N. H et al.sans titre. 2002, pp 776-781, isbn 0-7803-7471-1, 6 p.Conference Paper

Low temperature epitaxy of HgTe, CdTe, and HgCdTe using flow modulation techniquesBHAT, I. B; EHSANI, H; WANG, W. S et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1376-1379, issn 0734-211XConference Paper

GaAs-based diode lasers on Si with increased lifetime obtained by using stained InGaAs active layerCHOI, H. K; WANG, C. A; KARAM, N. H et al.Applied physics letters. 1991, Vol 59, Num 21, pp 2634-2635, issn 0003-6951Article

Thermal stresses in square-patterned GaAs/Si : a finite-element studyLINGUINIS, E. H; HAEGEL, N. M; KARAM, N. H et al.Applied physics letters. 1991, Vol 59, Num 26, pp 3428-3430, issn 0003-6951Article

Photoluminescence studies of stress relief in selectively grown GaAs on Si by metalorganic chemical vapor depositionLINGUNIS, E. H; HAEGEL, N. M; KARAM, N. H et al.Solid state communications. 1990, Vol 76, Num 3, pp 303-306, issn 0038-1098, 4 p.Article

Large area deposition of Cd_1-xZn_xTe on GaAs and Si substrates by metalorganic chemical vapor depositionKARAM, N. H; SUDHARSANAN, R; MASTROVITO, A et al.Journal of electronic materials. 1995, Vol 24, Num 5, pp 483-489, issn 0361-5235Conference Paper

Cathodoluminescence studies and finite element analysis of thermal stresses in GaAs/Si stripesLINGUNIS, E. H; HAEGEL, N. M; KARAM, N. H et al.Journal of applied physics. 1993, Vol 74, Num 4, pp 2779-2785, issn 0021-8979Article

Growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxyKARAM, N. H; WOLFSON, R. G; BHAT, I. B et al.Thin solid films. 1993, Vol 225, Num 1-2, pp 261-264, issn 0040-6090Conference Paper

Criterion for suppressing wafer bow in heterostructures by selective epitaxyEL-MASRY, N. A; HUSSIEN, S. A; FAHMY, A. A et al.Materials letters (General ed.). 1992, Vol 14, Num 1, pp 58-62, issn 0167-577XArticle

Room-temperature CW operation of GaAs-AlGaAs diode lasers on silicon-on-insulator wafersCHOI, H. K; WANG, C. A; KARAM, N. H et al.IEEE Photonics technology letters. 1991, Vol 3, Num 4, pp 289-291Article

Formation of low dislocation density silicon-on-insulator by a single implantation and annealingEL-GHOR, M. K; PENNYCOOK, S. J; NAMAVAR, F et al.Applied physics letters. 1990, Vol 57, Num 2, pp 156-158, issn 0003-6951Article

High-voltage, low-current GaInP/GaInP/GaAs/GaInNAs/Ge solar cellsKING, R. R; COLTER, P. C; JOSLIN, D. E et al.sans titre. 2002, pp 852-855, isbn 0-7803-7471-1, 4 p.Conference Paper

Fabrication of high efficiency, III-V multi-junction solar cells for space concentratorsSTAVRIDES, Alex; KING, Richard R; COLTER, Peter et al.sans titre. 2002, pp 920-922, isbn 0-7803-7471-1, 3 p.Conference Paper

Growth and characterization of AI_xGa_1-xAs Bragg reflectors by LP-MOCVDVERNON, S. M; TOBIN, S. P; SANFACON, M. M et al.Journal of electronic materials. 1992, Vol 21, Num 3, pp 335-340, issn 0361-5235Conference Paper

Low-temperature (250 °C) selective epitaxy of GaAs films and p-n junction by laser-assisted metalorganic chemical vapor depositionKARAM, N. H; LIU, H; YOSHIDA, I et al.Applied physics letters. 1988, Vol 53, Num 9, pp 767-769, issn 0003-6951Article

Interactions of dislocations in GaAs grown on Si substrates with InGaAs-GaAsP strained layered superlatticesEL-MASRY, N. A; TARN, J. C; KARAM, N. H et al.Journal of applied physics. 1988, Vol 64, Num 7, pp 3672-3677, issn 0021-8979Article

Molecular stream epitaxy of ultrathin InGaAs/GaAsP superlatticesKATSUYAMA, T; TISCHLER, M. A; KARAM, N. H et al.Applied physics letters. 1987, Vol 51, Num 7, pp 529-531, issn 0003-6951Article